Negative Capacitance in Organic/Ferroelectric Capacitor to Implement Steep Switching MOS Devices

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• 作者：Jaesung Jo ; Woo Young Choi ; Jung-Dong Park ; Jae Won Shim ; Hyun-Yong Yu ; Changhwan Shin
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：July 8, 2015
• 年：2015
• 卷：15
• 期：7
• 页码：4553-4556
• 全文大小：292K
• ISSN：1530-6992

文摘

Because of the 鈥淏oltzmann tyranny鈥?(i.e., the nonscalability of thermal voltage), a certain minimum gate voltage in metal鈥搊xide鈥搒emiconductor (MOS) devices is required for a 10-fold increase in drain-to-source current. The subthreshold slope (SS) in MOS devices is, at best, 60 mV/decade at 300 K. Negative capacitance in organic/ferroelectric materials is proposed in order to address this physical limitation in MOS technology. Here, we experimentally demonstrate the steep switching behavior of a MOS device鈥攖hat is, SS 鈭?18 mV/decade (much less than 60 mV/decade) at 300 K鈥攂y taking advantage of negative capacitance in a MOS gate stack. This negative capacitance, originating from the dynamics of the stored energy in a phase transition of a ferroelectric material, can achieve the step-up conversion of internal voltage (i.e., internal voltage amplification in a MOS device). With the aid of a series-connected negative capacitor as an assistive device, the surface potential in the MOS device becomes higher than the applied gate voltage, so that a SS of 18 mV/decade at 300 K is reliably observed.