Intrinsic Electron Mobility Exceeding 103 cm2/(V s) in Multilayer InSe FETs

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• 作者：Sukrit Sucharitakul ; Nicholas J. Goble ; U. Rajesh Kumar ; Raman Sankar ; Zachary A. Bogorad ; Fang-Cheng Chou ; Yit-Tsong Chen ; Xuan P. A. Gao
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：June 10, 2015
• 年：2015
• 卷：15
• 期：6
• 页码：3815-3819
• 全文大小：365K
• ISSN：1530-6992

文摘

Graphene-like two-dimensional (2D) materials not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also hold promises for device miniaturization down to atomic thickness. As one material belonging to this category, InSe, a III鈥揤I semiconductor, not only is a promising candidate for optoelectronic devices but also has potential for ultrathin field effect transistor (FET) with high mobility transport. In this work, various substrates such as PMMA, bare silicon oxide, passivated silicon oxide, and silicon nitride were used to fabricate multilayer InSe FET devices. Through back gating and Hall measurement in four-probe configuration, the device鈥檚 field effect mobility and intrinsic Hall mobility were extracted at various temperatures to study the material鈥檚 intrinsic transport behavior and the effect of dielectric substrate. The sample鈥檚 field effect and Hall mobilities over the range of 20鈥?00 K fall in the range of 0.1鈥?.0 脳 10³ cm²/(V s), which are comparable or better than the state of the art FETs made of widely studied 2D transition metal dichalcogenides.