Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

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• 作者：Andreas Johannes ; Stefan Noack ; Werner Wesch ; Markus Glaser ; Alois Lugstein ; Carsten Ronning
• 刊名：Nano Letters
• 出版年：2015
• 出版时间：June 10, 2015
• 年：2015
• 卷：15
• 期：6
• 页码：3800-3807
• 全文大小：384K
• ISSN：1530-6992

文摘

Silicon nanowires of various diameters were irradiated with 100 keV and 300 keV Ar⁺ ions on a rotatable and heatable stage. Irradiation at elevated temperatures above 300 掳C retains the geometry of the nanostructure and sputtering can be gauged accurately. The diameter dependence of the sputtering shows a maximum if the ion range matches the nanowire diameter, which is in good agreement with Monte Carlo simulations based on binary collisions. Nanowires irradiated at room temperature, however, amorphize and deform plastically. So far, plastic deformation has not been observed in bulk silicon at such low ion energies. The magnitude and direction of the deformation is independent of the ion-beam direction and cannot be explained with mass-transport in a binary collision cascade but only by collective movement of atoms in the collision cascade with the given boundary conditions of a high surface to volume ratio.