Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays

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• 作者：Mikai Chen ; Hongsuk Nam ; Hossein Rokni ; Sungjin Wi ; Jeong Seop Yoon ; Pengyu Chen ; Katsuo Kurabayashi ; Wei Lu ; Xiaogan Liang
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：September 22, 2015
• 年：2015
• 卷：9
• 期：9
• 页码：8773-8785
• 全文大小：868K
• ISSN：1936-086X

文摘

MoS₂ and other semiconducting transition metal dichalcogenides (TMDCs) are of great interest due to their excellent physical properties and versatile chemistry. Although many recent research efforts have been directed to explore attractive properties associated with MoS₂ monolayers, multilayer/few-layer MoS₂ structures are indeed demanded by many practical scale-up device applications, because multilayer structures can provide sizable electronic/photonic state densities for driving upscalable electrical/optical signals. Currently there is a lack of processes capable of producing ordered, pristine multilayer structures of MoS₂ (or other relevant TMDCs) with manufacturing-grade uniformity of thicknesses and electronic/photonic properties. In this article, we present a nanoimprint-based approach toward addressing this challenge. In this approach, termed as nanoimprint-assisted shear exfoliation (NASE), a prepatterned bulk MoS₂ stamp is pressed into a polymeric fixing layer, and the imprinted MoS₂ features are exfoliated along a shear direction. This shear exfoliation can significantly enhance the exfoliation efficiency and thickness uniformity of exfoliated flakes in comparison with previously reported exfoliation processes. Furthermore, we have preliminarily demonstrated the fabrication of multiple transistors and biosensors exhibiting excellent device-to-device performance consistency. Finally, we present a molecular dynamics modeling analysis of the scaling behavior of NASE. This work holds significant potential to leverage the superior properties of MoS₂ and other emerging TMDCs for practical scale-up device applications.