A Facile Route for Patterned Growth of Metal鈥揑nsulator Carbon Lateral Junction through One-Pot Synthesis

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• 作者：Beomjin Park ; Jaesung Park ; Jin Gyeong Son ; Yong-Jin Kim ; Seong Uk Yu ; Hyo Ju Park ; Dong-Hun Chae ; Jinseok Byun ; Gumhye Jeon ; Sung Huh ; Seoung-Ki Lee ; Artem Mishchenko ; Seung Hyun ; Tae Geol Lee ; Sang Woo Han ; Jong-Hyun Ahn ; Zonghoon Lee ; Chanyong Hwang ; Konstantin S. Novoselov ; Kwang S. Kim ; Byung Hee Hong ; Jin Kon Kim
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：August 25, 2015
• 年：2015
• 卷：9
• 期：8
• 页码：8352-8360
• 全文大小：736K
• ISSN：1936-086X

文摘

Precise graphene patterning is of critical importance for tailor-made and sophisticated two-dimensional nanoelectronic and optical devices. However, graphene-based heterostructures have been grown by delicate multistep chemical vapor deposition methods, limiting preparation of versatile heterostructures. Here, we report one-pot synthesis of graphene/amorphous carbon (a-C) heterostructures from a solid source of polystyrene via selective photo-cross-linking process. Graphene is successfully grown from neat polystyrene regions, while patterned cross-linked polystyrene regions turn into a-C because of a large difference in their thermal stability. Since the electrical resistance of a-C is at least 2 orders of magnitude higher than that for graphene, the charge transport in graphene/a-C heterostructure occurs through the graphene region. Measurement of the quantum Hall effect in graphene/a-C lateral heterostructures clearly confirms the reliable quality of graphene and well-defined graphene/a-C interface. The direct synthesis of patterned graphene from polymer pattern could be further exploited to prepare versatile heterostructures.