Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed

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• 作者：Hee Sung Lee ; Seung Su Baik ; Kimoon Lee ; Sung-Wook Min ; Pyo Jin Jeon ; Jin Sung Kim ; Kyujin Choi ; Hyoung Joon Choi ; Jae Hoon Kim ; Seongil Im
• 刊名：ACS Nano
• 出版年：2015
• 出版时间：August 25, 2015
• 年：2015
• 卷：9
• 期：8
• 页码：8312-8320
• 全文大小：659K
• ISSN：1936-086X

文摘

Molybdenum disulfide (MoS₂) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal鈥搃nsulator鈥搒emiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS₂ interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS₂ MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS₂-based metal semiconductor field-effect transistors (MESFETs) using NiO_x Schottky electrode which makes van der Waals interface with MoS₂. We thus expect that the maximum mobilities or carrier transport behavior of the Schottky devices may hardly be interfered by interface traps or an on-state gate field. Our MESFETs with a few and 鈭?0 layer MoS₂ demonstrate intrinsic-like high mobilities of 500鈥?200 cm²/(V s) at a certain low threshold voltage between 鈭? and 鈭? V without much hysteresis. Moreover, they work as a high speed and highly sensitive phototransistor with 2 ms switching and 鈭?000 A/W, respectively, supporting their high intrinsic mobility results.