Vertically Aligned Ge Nanowires on Flexible Plastic Films Synthesized by (111)-Oriented Ge Seeded Vapor鈥揕iquid鈥揝olid Growth

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• 作者：Kaoru Toko ; Mitsuki Nakata ; Wipakorn Jevasuwan ; Naoki Fukata ; Takashi Suemasu
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：August 19, 2015
• 年：2015
• 卷：7
• 期：32
• 页码：18120-18124
• 全文大小：455K
• ISSN：1944-8252

文摘

Transfer-free fabrication of vertical Ge nanowires (NWs) on a plastic substrate is demonstrated using a vapor鈥搇iquid鈥搒olid (VLS) method. The crystal quality of Ge seed layers (50 nm thickness) prepared on plastic substrates strongly influenced the VLS growth morphology, i.e., the density, uniformity, and crystal quality of Ge NWs. The metal-induced layer exchange yielded a (111)-oriented Ge seed layer at 325 掳C, which allowed for the VLS growth of vertically aligned Ge NWs. The Ge NW array had almost the same quality as that formed on a bulk Ge(111) substrate. Transmission electron microscopy demonstrated that the Ge NWs were defect-free single crystals. The present investigation paves the way for advanced electronic optical devices integrated on a low-cost flexible substrate.