CdSe Nanowire-Based Flexible Devices: Schottky Diodes, Metal鈥揝emiconductor Field-Effect Transistors, and Inverters

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• 作者：Weifeng Jin ; Kun Zhang ; Zhiwei Gao ; Yanping Li ; Li Yao ; Yilun Wang ; Lun Dai
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：June 24, 2015
• 年：2015
• 卷：7
• 期：24
• 页码：13131-13136
• 全文大小：353K
• ISSN：1944-8252

文摘

Novel CdSe nanowire (NW)-based flexible devices, including Schottky diodes, metal鈥搒emiconductor field-effect transistors (MESFETs), and inverters, have been fabricated and investigated. The turn-on voltage of a typical Schottky diode is about 0.7 V, and the rectification ratio is larger than 1 脳 10⁷. The threshold voltage, on/off current ratio, subthreshold swing, and peak transconductance of a typical MESFET are about 鈭?.3 V, 4 脳 10⁵, 78 mV/dec, and 2.7 渭S, respectively. The inverter, constructed with two MESFETs, exhibits clear inverting behavior with the gain to be about 28, 34, and 38, at the supply voltages (V_DD) of 3, 5, and 7 V, respectively. The inverter also shows good dynamic behavior. The rising and falling times of the output signals are about 0.18 and 0.09 ms, respectively, under 1000 Hz square wave signals input. The performances of the flexible devices are stable and reliable under different bending conditions. Our work demonstrates these flexible NW-based Schottky diodes, MESFETs, and inverters are promising candidate components for future portable transparent nanoelectronic devices.