Flexible MoS2 Field-Effect Transistors for Gate-Tunable Piezoresistive Strain Sensors

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• 作者：Meng-Yen Tsai ; Alexey Tarasov ; Zohreh R. Hesabi ; Hossein Taghinejad ; Philip M. Campbell ; Corey A. Joiner ; Ali Adibi ; Eric M. Vogel
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2015
• 出版时间：June 17, 2015
• 年：2015
• 卷：7
• 期：23
• 页码：12850-12855
• 全文大小：357K
• ISSN：1944-8252

文摘

Atomically thin molybdenum disulfide (MoS₂) is a promising two-dimensional semiconductor for high-performance flexible electronics, sensors, transducers, and energy conversion. Here, piezoresistive strain sensing with flexible MoS₂ field-effect transistors (FETs) made from highly uniform large-area films is demonstrated. The origin of the piezoresistivity in MoS₂ is the strain-induced band gap change, which is confirmed by optical reflection spectroscopy. In addition, the sensitivity to strain can be tuned by more than 1 order of magnitude by adjusting the Fermi level via gate biasing.