Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

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• 作者：Pyo Jin Jeon ; Young Tack Lee ; June Yeong Lim ; Jin Sung Kim ; Do Kyung Hwang ; Seongil Im
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：February 10, 2016
• 年：2016
• 卷：16
• 期：2
• 页码：1293-1298
• 全文大小：481K
• ISSN：1530-6992

文摘

Black phosphorus (BP) nanosheet is two-dimensional (2D) semiconductor with distinct band gap and attracting recent attention from researches because it has some similarity to gapless 2D semiconductor graphene in the following two aspects: single element (P) for its composition and quite high mobilities depending on its fabrication conditions. Apart from several electronic applications reported with BP nanosheet, here we report for the first time BP nanosheet–ZnO nanowire 2D–1D heterojunction applications for p–n diodes and BP-gated junction field effect transistors (JFETs) with n-ZnO channel on glass. For these nanodevices, we take advantages of the mechanical flexibility of p-type conducting of BP and van der Waals junction interface between BP and ZnO. As a result, our BP–ZnO nanodimension p–n diode displays a high ON/OFF ratio of ～10⁴ in static rectification and shows kilohertz dynamic rectification as well while ZnO nanowire channel JFET operations are nicely demonstrated by BP gate switching in both electrostatics and kilohertz dynamics.