Room Temperature Semiconductor–Metal Transition of MoTe2 Thin Films Engineered by Strain

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• 作者：Seunghyun Song ; Dong Hoon Keum ; Suyeon Cho ; David Perello ; Yunseok Kim ; Young Hee Lee
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：January 13, 2016
• 年：2016
• 卷：16
• 期：1
• 页码：188-193
• 全文大小：434K
• ISSN：1530-6992

文摘

We demonstrate a room temperature semiconductor–metal transition in thin film MoTe₂ engineered by strain. Reduction of the 2H-1T′ phase transition temperature of MoTe₂ to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance ～10?000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials.