Defect-Free Self-Catalyzed GaAs/GaAsP Nanowire Quantum Dots Grown on Silicon Substrate

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• 作者：Jiang Wu ; Andrew Ramsay ; Ana Sanchez ; Yunyan Zhang ; Dongyoung Kim ; Frederic Brossard ; Xian Hu ; Mourad Benamara ; Morgan E. Ware ; Yuriy I. Mazur ; Gregory J. Salamo ; Martin Aagesen ; Zhiming Wang ; Huiyun Liu
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：January 13, 2016
• 年：2016
• 卷：16
• 期：1
• 页码：504-511
• 全文大小：566K
• ISSN：1530-6992

文摘

The III–V nanowire quantum dots (NWQDs) monolithically grown on silicon substrates, combining the advantages of both one- and zero-dimensional materials, represent one of the most promising technologies for integrating advanced III–V photonic technologies on a silicon microelectronics platform. However, there are great challenges in the fabrication of high-quality III–V NWQDs by a bottom-up approach, that is, growth by the vapor–liquid–solid method, because of the potential contamination caused by external metal catalysts and the various types of interfacial defects introduced by self-catalyzed growth. Here, we report the defect-free self-catalyzed III–V NWQDs, GaAs quantum dots in GaAsP nanowires, on a silicon substrate with pure zinc blende structure for the first time. Well-resolved excitonic emission is observed with a narrow line width. These results pave the way toward on-chip III–V quantum information and photonic devices on silicon platform.