Oxide-based Synaptic Transistors Gated by Sol–Gel Silica Electrolytes

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• 作者：Feng Shao ; Yi Yang ; Li Qiang Zhu ; Ping Feng ; Qing Wan
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：February 10, 2016
• 年：2016
• 卷：8
• 期：5
• 页码：3050-3055
• 全文大小：395K
• ISSN：1944-8252

文摘

Low-temperature sol–gel processed silica electrolyte films showed a high specific capacitance of 3.0 μF/cm² due to the electric-double-layer (EDL) effect. Oxide-based transistors gated by such silica electrolyte films show a high on/off ratio (>10⁷) and a very low operation voltage (<2.0 V). The proton-related dynamic modulation in these devices makes them ideal candidates for biological synapse emulation. Short-term synaptic plasticity, such as paired pulse facilitation, was successfully emulated. Most importantly, spiking and logic operation were also demonstrated when two lateral in-plane gates were used as the presynaptic inputs. Our oxide-based EDL transistors gated by sol–gel processed silica electrolyte films provide an interesting approach for synaptic behavior emulation, which is interesting for brain-inspired neuromorphic systems.