Phase Segregation and Superior Thermoelectric Properties of Mg2Si1–xSbx (0 ≤ x ≤ 0.025) Prepared by Ultrafast Self-Propagating High-Temperature Synthesis

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• 作者：Qiang Zhang ; Xianli Su ; Yonggao Yan ; Hongyao Xie ; Tao Liang ; Yonghui You ; Xinfeng Tang ; Ctirad Uher
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：February 10, 2016
• 年：2016
• 卷：8
• 期：5
• 页码：3268-3276
• 全文大小：625K
• ISSN：1944-8252

文摘

A series of Sb-doped Mg₂Si_1–xSb_x compounds with the Sb content x within 0 ≤ x ≤ 0.025 were prepared by self-propagating high-temperature synthesis (SHS) combined with plasma activated sintering (PAS) method in less than 20 min. Thermodynamic parameters of the SHS process, such as adiabatic temperature, ignition temperature, combustion temperature, and propagation speed of the combustion wave, were determined for the first time. Nanoprecipitates were observed for the samples doped with Sb. Thermoelectric properties were characterized in the temperature range of 300–875 K. With the increasing content of Sb, the electrical conductivity σ rises markedly while the Seebeck coefficient α decreases, which is attributed to the increase in carrier concentration. The carrier mobility μ_H decreases slightly with the increasing carrier concentration but remains larger than the Sb-doped samples prepared by other methods, which is ascribed to the self-purification process associated with the SHS synthesis. In spite of the increasing electrical conductivity with the increasing Sb content x, the overall thermal conductivity κ decreases on account of a significantly falled lattice thermal conductivity κ_L due to the strong point defect scattering on Sb impurities and possibly enhanced interface scattering on nanoprecipitates. As a result, the sample with x = 0.02 achieves the thermoelectric figure of merit ZT ～ 0.65 at 873 K, one of the highest values for the Sb-doped binary Mg₂Si compounds investigated so far. A subsequent annealing treatment on the sample with x = 0.02 at 773 K for 7 days has resulted in no noticeble changes in the thermoelectric transport properties, indicating an excellent thermal stability of the compounds prepared by the SHS method. Therefore, SHS method can serve as an effective alternative fabrication route to synthesize Mg–Si based themoelectrics and some other functional materials due to the resulting high performance, perfect thermal stability, and feasible production in large scale for commercial application.