Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns

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• 作者：Bin Wang ; Ming Huang ; Li Tao ; Sun Hwa Lee ; A-Rang Jang ; Bao-Wen Li ; Hyeon Suk Shin ; Deji Akinwande ; Rodney S. Ruoff
• 刊名：ACS Nano
• 出版年：2016
• 出版时间：January 26, 2016
• 年：2016
• 卷：10
• 期：1
• 页码：1404-1410
• 全文大小：348K
• ISSN：1936-086X

文摘

We explored a support-free method for transferring large area graphene films grown by chemical vapor deposition to various fluoric self-assembled monolayer (F-SAM) modified substrates including SiO₂/Si wafers, polyethylene terephthalate films, and glass. This method yields clean, ultrasmooth, and high-quality graphene films for promising applications such as transparent, conductive, and flexible films due to the absence of residues and limited structural defects such as cracks. The F-SAM introduced in the transfer process can also lead to graphene transistors with enhanced field-effect mobility (up to 10,663 cm²/Vs) and resistance modulation (up to 12×) on a standard silicon dioxide dielectric. Clean graphene patterns can be realized by transfer of graphene onto only the F-SAM modified surfaces.