用户名: 密码: 验证码:
Solution-Processed Two-Dimensional Ultrathin InSe Nanosheets
详细信息    查看全文
文摘
The rise of two-dimensional (2D) graphene-cognated crystals with nonzero band gaps like transition metal dichalcogenides has led to a rapidly increasing interest in their dimensionality-dependent anisotropic properties, which bear high potential for ultrathin electronics. 2D crystals of the III–VI metal chalcogenide InSe represent a new kind of material class predestined for the use in optoelectronic applications as highly responsive photodetectors and field-effect transistors. We present a solution-processable method for 2D ultrathin InSe nanosheets (≤5 nm with ligands, lateral sizes up to ∼800 μm) with a detailed characterization of the sheet formation by a lamellar ligand templated growth. Optical and electrical transport properties, as well as in depth analysis of the crystal structure and stoichiometry of the colloidal nanosheets by electron and atomic force microscopy, X-ray photoelectron spectroscopy, and scattering methods complete this comprehensive study on a wet-chemical alternative to produce ultrathin InSe nanosheets.

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700