Alloyed 2D Metal–Semiconductor Atomic Layer Junctions

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• 作者：Ah Ra Kim ; Yonghun Kim ; Jaewook Nam ; Hee-Suk Chung ; Dong Jae Kim ; Jung-Dae Kwon ; Sang Won Park ; Jucheol Park ; Sun Young Choi ; Byoung Hun Lee ; Ji Hyeon Park ; Kyu Hwan Lee ; Dong-Ho Kim ; Sung Mook Choi ; Pulickel M. Ajayan ; Myung Gwan Hahm ; Byungjin Cho
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：March 9, 2016
• 年：2016
• 卷：16
• 期：3
• 页码：1890-1895
• 全文大小：422K
• ISSN：1530-6992

文摘

Heterostructures of compositionally and electronically variant two-dimensional (2D) atomic layers are viable building blocks for ultrathin optoelectronic devices. We show that the composition of interfacial transition region between semiconducting WSe₂ atomic layer channels and metallic NbSe₂ contact layers can be engineered through interfacial doping with Nb atoms. W_xNb_1–xSe₂ interfacial regions considerably lower the potential barrier height of the junction, significantly improving the performance of the corresponding WSe₂-based field-effect transistor devices. The creation of such alloyed 2D junctions between dissimilar atomic layer domains could be the most important factor in controlling the electronic properties of 2D junctions and the design and fabrication of 2D atomic layer devices.