Electrically Tunable Valley-Light Emitting Diode (vLED) Based on CVD-Grown Monolayer WS2

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• 作者：Weihuang Yang ; Jingzhi Shang ; Jianpu Wang ; Xiaonan Shen ; Bingchen Cao ; Namphung Peimyoo ; Chenji Zou ; Yu Chen ; Yanlong Wang ; Chunxiao Cong ; Wei Huang ; Ting Yu
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：March 9, 2016
• 年：2016
• 卷：16
• 期：3
• 页码：1560-1567
• 全文大小：478K
• ISSN：1530-6992

文摘

Owing to direct band gap and strong spin–orbit coupling, monolayer transition-metal dichalcogenides (TMDs) exhibit rich new physics and great applicable potentials. The remarkable valley contrast and light emission promise such two-dimensional (2D) semiconductors a bright future of valleytronics and light-emitting diodes (LEDs). Though the electroluminescence (EL) has been observed in mechanically exfoliated small flakes of TMDs, considering real applications, a strategy that could offer mass-product and high compatibility is greatly demanded. Large-area and high-quality samples prepared by chemical vapor deposition (CVD) are perfect candidates toward such goal. Here, we report the first demonstration of electrically tunable chiral EL from CVD-grown monolayer WS₂ by constructing a p–i–n heterojunction. The chirality contrast of the overall EL reaches as high as 81% and can be effectively modulated by forward current. The success of fabricating valley LEDs based on CVD WS₂ opens up many opportunities for developing large-scale production of unconventional 2D optoelectronic devices.