Enhanced Conversion Efficiency of Cu(In,Ga)Se2 Solar Cells via Electrochemical Passivation Treatment

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• 作者：Hung-Wei Tsai ; Stuart R. Thomas ; Chia-Wei Chen ; Yi-Chung Wang ; Hsu-Sheng Tsai ; Yu-Ting Yen ; Cheng-Hung Hsu ; Wen-Chi Tsai ; Zhiming M. Wang ; Yu-Lun Chueh
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：March 30, 2016
• 年：2016
• 卷：8
• 期：12
• 页码：7777-7782
• 全文大小：414K
• ISSN：1944-8252

文摘

Defect control in Cu(In,Ga)Se₂ (CIGS) materials, no matter what the defect type or density, is a significant issue, correlating directly to PV performance. These defects act as recombination centers and can be briefly categorized into interface recombination and Shockley–Read–Hall (SRH) recombination, both of which can lead to reduced PV performance. Here, we introduce an electrochemical passivation treatment for CIGS films that can lower the oxygen concentration at the CIGS surface as observed by X-ray photoelectron spectrometer analysis. Temperature-dependent J–V characteristics of CIGS solar cells reveal that interface recombination is suppressed and an improved rollover condition can be achieved following our electrochemical treatment. As a result, the surface defects are passivated, and the power conversion efficiency performance of the solar cell devices can be enhanced from 4.73 to 7.75%.