Sputtering Deposition of Sandwich-Structured V2O5/Metal (V, W)/V2O5 Multilayers for the Preparation of High-Performance Thermally Sensitive VO2 Thin Films with Selectivity of VO2 (B) and VO2 (M) Polymorph

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• 作者：Hengwu Liu ; Dongyun Wan ; Ahmad Ishaq ; Lanli Chen ; Beibei Guo ; Siqi Shi ; Hongjie Luo ; Yanfeng Gao
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：March 30, 2016
• 年：2016
• 卷：8
• 期：12
• 页码：7884-7890
• 全文大小：543K
• ISSN：1944-8252

文摘

For specific application to an uncooled infrared detector, VO₂ thin films should have a series of characteristics including purposefully chosen polymorphs, accurate stoichiometry, phase stabilization, a high temperature-coefficient of resistance (TCR), and suitable square-resistance. This work reports controllable preparation of high-performance VO₂ films via post annealing of a sandwich-structured V₂O₅/metal (V, W)/V₂O₅ multilayer precursor, which was deposited by RF magnetron sputtering. This sandwich structure can dynamically regulate oxygen contents and doping element levels in the films, enabling us to achieve accurate regulation of stoichiometry and polymorphs. The precursor films undergo a B to M phase transition depending on the quantity of the metal layers. At the thickness of the metal layer below a limitation, the resulting film after heat treatment was VO₂ (B), and above the limitation, the product was VO₂ (M). The optical modulation of the VO₂ (M) in the near-infrared region can be tuned from 1.2 to 39.8% (ΔT_2000 nm). TCR values can range from −1.89 to −4.29%/K and the square-resistances at room temperature (R₀) from 69.68 to 12.63 kΩ. The simplicity in phase regulation of the present method and the superior optical and electrical properties of the films may allow its wide applications in thermo-opto-electro sensing devices.