MoS2–Titanium Contact Interface Reactions

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• 作者：Stephen McDonnell ; Christopher Smyth ; Christopher L. Hinkle ; Robert M. Wallace
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：March 30, 2016
• 年：2016
• 卷：8
• 期：12
• 页码：8289-8294
• 全文大小：372K
• ISSN：1944-8252

文摘

The formation of the Ti–MoS₂ interface, which is heavily utilized in nanoelectronic device research, is studied by X-ray photoelectron spectroscopy. It is found that, if deposition under high vacuum (∼1 × 10^–6 mbar) as opposed to ultrahigh vacuum (∼1 × 10^–9 mbar) conditions are used, TiO₂ forms at the interface rather than Ti. The high vacuum deposition results in an interface free of any detectable reaction between the semiconductor and the deposited contact. In contrast, when metallic titanium is successfully deposited by carrying out depositions in ultrahigh vacuum, the titanium reacts with MoS₂ forming Ti_xS_y and metallic Mo at the interface. These results have far reaching implications as many prior studies assuming Ti contacts may have actually used TiO₂ due to the nature of the deposition tools used.