Fabrication and Enhanced Photoelectrochemical Performance of MoS2/S-Doped g-C3N4 Heterojunction Film

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• 作者：Lijuan Ye ; Dan Wang ; Shijian Chen
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：March 2, 2016
• 年：2016
• 卷：8
• 期：8
• 页码：5280-5289
• 全文大小：566K
• ISSN：1944-8252

文摘

We report on a novel MoS<sub>2sub>/S-doped g-C<sub>3sub>N<sub>4sub> heterojunction film with high visible-light photoelectrochemical (PEC) performance. The heterojunction films are prepared by CVD growth of S-doped g-C<sub>3sub>N<sub>4sub> film on indium–tin oxide (ITO) glass substrates, with subsequent deposition of a low bandgap, 1.69 eV, visible-light response MoS<sub>2sub> layer by hydrothermal synthesis. Adding thiourea into melamine as the coprecursor not only facilitates the growth of g-C<sub>3sub>N<sub>4sub> films but also introduces S dopants into the films, which significantly improves the PEC performance. The fabricated MoS<sub>2sub>/S-doped g-C<sub>3sub>N<sub>4sub> heterojunction film offers an enhanced anodic photocurrent of as high as ∼1.2 × 10<sup>–4sup> A/cm<sup>2sup> at an applied potential of +0.5 V vs Ag/AgCl under the visible light irradiation. The enhanced PEC performance of MoS<sub>2sub>/S-doped g-C<sub>3sub>N<sub>4sub> film is believed due to the improved light absorption and the efficient charge separation of the photogenerated charge at the MoS<sub>2sub>/S-doped g-C<sub>3sub>N<sub>4sub> interface. The convenient preparation of carbon nitride based heterojunction films in this work can be widely used to design new heterojunction photoelectrodes or photocatalysts with high performance for H<sub>2sub> evolution.