Multilevel Resistance Switching Memory in La2/3Ba1/3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) Heterostructure by Combined Straintronics-Spintronics

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• 作者：Weiping Zhou ; Yuanqiang Xiong ; Zhengming Zhang ; Dunhui Wang ; Weishi Tan ; Qingqi Cao ; Zhenghong Qian ; Youwei Du
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：March 2, 2016
• 年：2016
• 卷：8
• 期：8
• 页码：5424-5431
• 全文大小：490K
• ISSN：1944-8252

文摘

We demonstrate a memory device with multifield switchable multilevel states at room temperature based on the integration of straintronics and spintronics in a La_2/3Ba_1/3MnO₃/0.7Pb(Mg_1/3Nb_2/3)O₃-0.3PbTiO₃ (PMN–PT) (011) heterostructure. By precisely controlling the electric field applied on the PMN–PT substrate, multiple nonvolatile resistance states can be generated in La_2/3Ba_1/3MnO₃ films, which can be ascribed to the strain-modulated metal–insulator transition and phase separation of Manganite. Furthermore, because of the strong coupling between spin and charge degrees of freedom, the resistance of the La_2/3Ba_1/3MnO₃ film can be readily modulated by magnetic field over a broad temperature range. Therefore, by combining electroresistance and magnetoresistance effects, multilevel resistance states with excellent retention and endurance properties can be achieved at room temperature with the coactions of electric and magnetic fields. The incorporation of ferroelastic strain and magnetic and resistive properties in memory cells suggests a promising approach for multistate, high-density, and low-power consumption electronic memory devices.