Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction

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• 作者：Xing Chen ; Kewei Liu ; Zhenzhong Zhang ; Chunrui Wang ; Binghui Li ; Haifeng Zhao ; Dongxu Zhao ; Dezhen Shen
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：February 17, 2016
• 年：2016
• 卷：8
• 期：6
• 页码：4185-4191
• 全文大小：459K
• ISSN：1944-8252

文摘

Because of the direct band gap of 4.9 eV, β-Ga₂O₃ has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga₂O₃-based photodetectors usually possess a relatively long response time. In addition, the β-Ga₂O₃ photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga₂O₃ nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at −30 V with a sharp cutoff at 270 nm. More interestingly, the 90–10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga₂O₃-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga₂O₃ nanowires array film photodetector are helpful to its commercialization and practical applications.