Sensitive Electronic-Skin Strain Sensor Array Based on the Patterned Two-Dimensional α-In2Se3

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• 作者：Wei Feng ; Wei Zheng ; Feng Gao ; XiaoShuang Chen ; Guangbo Liu ; Tawfique Hasan ; WenWu Cao ; PingAn Hu
• 刊名：Chemistry of Materials
• 出版年：2016
• 出版时间：June 28, 2016
• 年：2016
• 卷：28
• 期：12
• 页码：4278-4283
• 全文大小：387K
• 年卷期：0
• ISSN：1520-5002

文摘

Two-dimensional (2D) layered semiconductors have emerged as a highly attractive class of materials for flexible and wearable strain sensor-centric devices such as electronic-skin (e-skin). This is primarily due to their dimensionality, excellent mechanical flexibility, and unique electronic properties. However, the lack of effective and low-cost methods for wafer-scale fabrication of these materials for strain sensor arrays limits their potential for such applications. Here, we report growth of large-scale 2D In₂Se₃ nanosheets by templated chemical vapor deposition (CVD) method, using In₂O₃ and Se powders as precursors. The strain sensors fabricated from the as-grown 2D In₂Se₃ films show 2 orders of magnitude higher sensitivity (gauge factor ∼237 in −0.39% to 0.39% uniaxial strain range along the device channel length) than what has been demonstrated from conventional metal-based (gauge factor: ∼1–5) and graphene-based strain sensors (gauge factor: ∼2–4) in a similar uniaxial strain range. The integrated strain sensor array, fabricated from the template-grown 2D In₂Se₃ films, exhibits a high spatial resolution of ∼500 μm in strain distribution. Our results demonstrate the applicability and highly attractive properties of 2D layered semiconductors in e-skins for robotics and human body motion monitoring.