van der Waal Epitaxy of Flexible and Transparent VO2 Film on Muscovite

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• 作者：Chien-I Li ; Jheng-Cyuan Lin ; Heng-Jui Liu ; Ming-Wen Chu ; Hsiao-Wen Chen ; Chun-Hao Ma ; Chih-Ya Tsai ; Hsin-Wei Huang ; Hong-Ji Lin ; Hsiang-Lin Liu ; Po-Wen Chiu ; Ying-Hao Chu
• 刊名：Chemistry of Materials
• 出版年：2016
• 出版时间：June 14, 2016
• 年：2016
• 卷：28
• 期：11
• 页码：3914-3919
• 全文大小：471K
• 年卷期：0
• ISSN：1520-5002

文摘

Vanadium dioxide (VO₂) is a compelling candidate for next-generation electronics beyond conventional silicon-based devices due to the exhibition of a sharp metal–insulator transition. In this study, in order to realize functional VO₂ film for flexible electronics, the growth of VO₂ film directly on a transparent and flexible muscovite via van der Waals epitaxy is established. The heteroepitaxy and structural transition of VO₂ films on muscovite are examined by a combination of high-resolution X-ray diffraction, transmission electron microscopy, and Raman spectroscopy. The unique metal–insulator transition of VO₂ is further revealed with a change in electrical resistance over 10³ and a more than 50% variation of optical transmittance. Furthermore, due to the nature of muscovite, the VO₂/muscovite heterostructure possesses superior flexibility and optical transparence. The approach developed in this study paves an intriguing way to fabricate functional VO₂ film for the applications in flexible electronics.