One-to-One Correspondence Growth Mechanism of Gourd-like SiOx Nanotubes

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• 作者：Han Gil Na ; Sun-Woo Choi ; Suyoung Park ; Seon Jae Hwang ; Myeong Soo Cho ; Youngwook Noh ; Hee Jung Kim ; Dongjin Lee ; Changhyun Jin
• 刊名：Crystal Growth & Design
• 出版年：2016
• 出版时间：June 1, 2016
• 年：2016
• 卷：16
• 期：6
• 页码：3081-3086
• 全文大小：476K
• 年卷期：0
• ISSN：1528-7505

文摘

In contrast with conventional thermal evaporation-based semiconducting oxide growth methods, gourd-like SiO_x nanotubes (NTs) grown from Si substrates were achieved with incorporated Sn-embedded structures through the precontaminated SnO₂ film surroundings. Interestingly, when Sn aggregations assembled as Sn nanoparticles were formed on the surface of the Si substrate, single gourd-like SiO_x NTs were grown from the upper local region of the ternary alloy (Si–Sn–O) sphere, maintaining a one-to-one correspondent relationship between the ternary spheres and the Sn-embedded SiO_x NTs. Both interfacial reaction-controlled and diffusion-controlled systems occurred stepwise at the smooth and rough surfaces, respectively. In addition, the elemental compositions and sizes of the final Sn-embedded SiO_x NTs were influenced by the Sn concentration of the SnO₂ film, the rate of In substitution by Sn in the supporting material In₂O₃, and the degree of carbothermal reduction of additional graphite powders.