Selective Growth of Covalent Organic Framework Ultrathin Films on Hexagonal Boron Nitride

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• 作者：Bing Sun ; Jing Li ; Wei-Long Dong ; Mei-Ling Wu ; Dong Wang
• 刊名：Journal of Physical Chemistry C
• 出版年：2016
• 出版时间：July 14, 2016
• 年：2016
• 卷：120
• 期：27
• 页码：14706-14711
• 全文大小：379K
• 年卷期：0
• ISSN：1932-7455

文摘

Incorporating the intriguing covalent organic framework (COF) into devices and performing their advanced electronic nature are still challenging. Herein, we demonstrate the direct growth of 2D full-conjugated COF ultrathin films on dielectric hexagonal boron nitride (hBN) for the first time and study the carrier transporting characteristics of π-conjugated COF films. Under the optimized solvothermal conditions, few-layered COF-366 films with the covalent connection of tetra(p-aminophenyl)porphyrin and terephthalaldehyde are selectively fabricated on mechanically exfoliated hBN flakes. COF-366 films on hBN substrate present red-shift absorption edge and decreased band gap compared to the bulk COF powders. The organic field-effect transistor device based on COF-366 ultrathin films demonstrates p-type current modulation with an on/off ratio of 10⁵ and mobility of 0.015 cm² V^–1 s^–1. The present work represents a universal method for COF film growth on dielectric surface and also provides important insight into the carrier transport of 2D π-conjugated system and potential applications of 2D COFs in electronics.