High-Efficiency Selective Electron Tunnelling in a Heterostructure Photovoltaic Diode

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• 作者：Chuancheng Jia ; Wei Ma ; Chunhui Gu ; Hongliang Chen ; Haomiao Yu ; Xinxi Li ; Fan Zhang ; Lin Gu ; Andong Xia ; Xiaoyuan Hou ; Sheng Meng ; Xuefeng Guo
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：June 8, 2016
• 年：2016
• 卷：16
• 期：6
• 页码：3600-3606
• 全文大小：432K
• 年卷期：0
• ISSN：1530-6992

文摘

A heterostructure photovoltaic diode featuring an all-solid-state TiO₂/graphene/dye ternary interface with high-efficiency photogenerated charge separation/transport is described here. Light absorption is accomplished by dye molecules deposited on the outside surface of graphene as photoreceptors to produce photoexcited electron–hole pairs. Unlike conventional photovoltaic conversion, in this heterostructure both photoexcited electrons and holes tunnel along the same direction into graphene, but only electrons display efficient ballistic transport toward the TiO₂ transport layer, thus leading to effective photon-to-electricity conversion. On the basis of this ipsilateral selective electron tunnelling (ISET) mechanism, a model monolayer photovoltaic device (PVD) possessing a TiO₂/graphene/acridine orange ternary interface showed ∼86.8% interfacial separation/collection efficiency, which guaranteed an ultrahigh absorbed photon-to-current efficiency (APCE, ∼80%). Such an ISET-based PVD may become a fundamental device architecture for photovoltaic solar cells, photoelectric detectors, and other novel optoelectronic applications with obvious advantages, such as high efficiency, easy fabrication, scalability, and universal availability of cost-effective materials.