Thirty Gigahertz Optoelectronic Mixing in Chemical Vapor Deposited Graphene

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• 作者：Alberto Montanaro ; Sana Mzali ; Jean-Paul Mazellier ; Odile Bezencenet ; Christian Larat ; Stephanie Molin ; Loïc Morvan ; Pierre Legagneux ; Daniel Dolfi ; Bruno Dlubak ; Pierre Seneor ; Marie-Blandine Martin ; Stephan Hofmann ; John Robertson ; Alba Centeno ; Amaia Zurutuza
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：May 11, 2016
• 年：2016
• 卷：16
• 期：5
• 页码：2988-2993
• 全文大小：410K
• 年卷期：0
• ISSN：1530-6992

文摘

The remarkable properties of graphene, such as broadband optical absorption, high carrier mobility, and short photogenerated carrier lifetime, are particularly attractive for high-frequency optoelectronic devices operating at 1.55 μm telecom wavelength. Moreover, the possibility to transfer graphene on a silicon substrate using a complementary metal-oxide-semiconductor-compatible process opens the ability to integrate electronics and optics on a single cost-effective chip. Here, we report an optoelectronic mixer based on chemical vapor-deposited graphene transferred on an oxidized silicon substrate. Our device consists in a coplanar waveguide that integrates a graphene channel, passivated with an atomic layer-deposited Al₂O₃ film. With this new structure, 30 GHz optoelectronic mixing in commercially available graphene is demonstrated for the first time. In particular, using a 30 GHz intensity-modulated optical signal and a 29.9 GHz electrical signal, we show frequency downconversion to 100 MHz. These results open promising perspectives in the domain of optoelectronics for radar and radio-communication systems.