Transfer-Free Growth of Atomically Thin Transition Metal Disulfides Using a Solution Precursor by a Laser Irradiation Process and Their Application in Low-Power Photodetectors

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• 作者：Chi-Chih Huang ; Henry Medina ; Yu-Ze Chen ; Teng-Yu Su ; Jian-Guang Li ; Chia-Wei Chen ; Yu-Ting Yen ; Zhiming M. Wang ; Yu-Lun Chueh
• 刊名：Nano Letters
• 出版年：2016
• 出版时间：April 13, 2016
• 年：2016
• 卷：16
• 期：4
• 页码：2463-2470
• 全文大小：568K
• 年卷期：0
• ISSN：1530-6992

文摘

Although chemical vapor deposition is the most common method to synthesize transition metal dichalcogenides (TMDs), several obstacles, such as the high annealing temperature restricting the substrates used in the process and the required transfer causing the formation of wrinkles and defects, must be resolved. Here, we present a novel method to grow patternable two-dimensional (2D) transition metal disulfides (MS<sub>2sub>) directly underneath a protective coating layer by spin-coating a liquid chalcogen precursor onto the transition metal oxide layer, followed by a laser irradiation annealing process. Two metal sulfides, molybdenum disulfide (MoS<sub>2sub>) and tungsten disulfide (WS<sub>2sub>), are investigated in this work. Material characterization reveals the diffusion of sulfur into the oxide layer prior to the formation of the MS<sub>2sub>. By controlling the sulfur diffusion, we are able to synthesize continuous MS<sub>2sub> layers beneath the top oxide layer, creating a protective coating layer for the newly formed TMD. Air-stable and low-power photosensing devices fabricated on the synthesized 2D WS<sub>2sub> without the need for a further transfer process demonstrate the potential applicability of TMDs generated via a laser irradiation process.