Enhanced Exciton Binding Energy of ZnO by Long-Distance Perturbation of Doped Be Atoms

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• 作者：Yu Quan Su ; Yuan Zhu ; Dingyu Yong ; Mingming Chen ; Longxing Su ; Anqi Chen ; Yanyan Wu ; Bicai Pan ; Zikang Tang
• 刊名：The Journal of Physical Chemistry Letters
• 出版年：2016
• 出版时间：April 21, 2016
• 年：2016
• 卷：7
• 期：8
• 页码：1484-1489
• 全文大小：393K
• 年卷期：0
• ISSN：1948-7185

文摘

The excitonic effect in semiconductors is sensitive to dopants. Origins of dopant-induced large variation in the exciton binding energy (E_b) is not well understood and has never been systematically studied. We choose ZnO as a typical high-E_b material, which is very promising in low-threshold lasing. To the best of our knowledge, its shortest wavelength electroluminescence lasing was realized by ZnO/BeZnO multiple quantum wells (MQWs). However, this exciting result is shadowed by a controversial E_b enhancement claimed. In this Letter, we reveal that the claimed E_b is sensible if we take Be-induced E_b variation into account. Detailed first-principle investigation of the interaction between dopant atoms and the lattice shows that the enhancement mainly comes from the long-distance perturbation of doped Be atoms rather than the local effect of doping atoms. This is a joint work of experiment and calculation, which from the angle of methology paves the way for understanding and predicting the E_b variation induced by doping.