Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

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• 作者：Huaping Li ; Hongyu Liu ; Yifan Tang ; Wenmin Guo ; Lili Zhou ; Nina Smolinski
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 17, 2016
• 年：2016
• 卷：8
• 期：32
• 页码：20527-20533
• 全文大小：449K
• 年卷期：0
• ISSN：1944-8252

文摘

Single-walled carbon nanotube (SWCNT) networks deposited from a purple single chirality (6,5) SWCNT aqueous solution were electrically characterized as pure semiconductors based on metal/semiconductor/metal Schottky contacts using both complex instruments and a portable device. Both air-stable PMOS (p-type metal-oxide-semiconductor) and NMOS (n-type metal-oxide-semiconductor, resembling amorphous silicon) thin film transistors were fabricated on (6,5) SWCNT in large scale showing the characteristics of fA off current and I_ON/I_OFF ratio of >1 × 10⁸. CMOS (complementary metal-oxide-semiconductor) SWCNT inverter was demonstrated by wire-bonding PMOS (6,5) SWCNT TFT and NMOS (6,5) SWCNT TFT together to achieve the voltage gain as large as 52.