Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates

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• 作者：Seung Hyun Kim ; So Yeong Joo ; Hyun Soo Jin ; Woo-Byoung Kim ; Tae Joo Park
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 17, 2016
• 年：2016
• 卷：8
• 期：32
• 页码：20880-20884
• 全文大小：371K
• 年卷期：0
• ISSN：1944-8252

文摘

Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO₂ films on InP substrates. The interfacial layer growth during the ALD of the HfO₂ film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.