Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using a Novel Silylamine Precursor

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• 作者：Jae-Min Park ; Se Jin Jang ; Luchana L. Yusup ; Won-Jun Lee ; Sang-Ick Lee
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 17, 2016
• 年：2016
• 卷：8
• 期：32
• 页码：20865-20871
• 全文大小：400K
• 年卷期：0
• ISSN：1944-8252

文摘

We report the plasma-enhanced atomic layer deposition (PEALD) of silicon nitride thin film using a silylamine compound as the silicon precursor. A series of silylamine compounds were designed by replacing SiH₃ groups in trisilylamine by dimethylaminomethylsilyl or trimethylsilyl groups to obtain sufficient thermal stability. The silylamine compounds were synthesized through redistribution, amino-substitution, lithiation, and silylation reactions. Among them, bis(dimethylaminomethylsilyl)trimethylsilyl amine (C₉H₂₉N₃Si₃, DTDN2-H2) was selected as the silicon precursor because of the lowest bond dissociation energy and sufficient vapor pressures. The energies for adsorption and reaction of DTDN2-H2 with the silicon nitride surface were also calculated by density functional theory. PEALD silicon nitride thin films were prepared using DTDN2-H2 and N₂ plasma. The PEALD process window was between 250 and 400 °C with a growth rate of 0.36 Å/cycle. The best film quality was obtained at 400 °C with a RF power of 100 W. The PEALD film prepared showed good bottom and sidewall coverages of ∼80% and ∼73%, respectively, on a trench-patterned wafer with an aspect ratio of 5.5.