Wafer-Size and Single-Crystal MoSe2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting

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• 作者：Zuxin Chen ; Huiqiang Liu ; Xuechen Chen ; Guang Chu ; Sheng Chu ; Hang Zhang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：August 10, 2016
• 年：2016
• 卷：8
• 期：31
• 页码：20267-20273
• 全文大小：529K
• 年卷期：0
• ISSN：1944-8252

文摘

Two-dimensional (2D) atomic-layered semiconductors are important for next-generation electronics and optoelectronics. Here, we designed the growth of an MoSe₂ atomic layer on a lattice-matched GaN semiconductor substrate. The results demonstrated that the MoSe₂ films were less than three atomic layers thick and were single crystalline of MoSe₂ over the entire GaN substrate. The ultrathin MoSe₂/GaN heterojunction diode demonstrated ∼850 nm light emission and could also be used in photovoltaic applications.