Nonvolatile Bipolar Resistive Switching Behavior in the Perovskite-like (CH3NH3)2FeCl4

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• 作者：Fengzhen Lv ; Cunxu Gao ; Heng-An Zhou ; Peng Zhang ; Kui Mi ; Xiaoxing Liu
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：July 27, 2016
• 年：2016
• 卷：8
• 期：29
• 页码：18985-18990
• 全文大小：417K
• 年卷期：0
• ISSN：1944-8252

文摘

The bipolar resistive switching behavior in a device based on an crystalline iron-based organic–inorganic, perovskite-like material of (CH₃NH₃)₂FeCl₄ (MAFC), was examined and studied. Both high and low resistance states appeared to have no obvious degradation during a measurement period of 600 s with 400 cycles in a Ag/MAFC/Cu device, which also exhibited good thermal stability over a wide temperature range of 290 to 340 K. The conductivity-state switching behavior was derived from the competition between the ionic current within the MAFC and the Faradaic current that originated from oxidative reactions at the Ag/MAFC/Cu interface. A model explaining the oxidative reaction process was established to describe the symmetric resistive switching behavior in the Ag/MAFC/Cu cell. With an applied bias voltage sweeping, the oxidative layers passivated and dissipated at the Ag/MAFC/Cu interface that resulted in the competition between the induced current and the ionic current, and thus caused a symmetric resistance change. On the basis of this interfacial effect, the MAFC crystals can be used as memristor elements in devices for write–read–erase–rewrite process.