Large-Scale Synthesis of a Uniform Film of Bilayer MoS2 on Graphene for 2D Heterostructure Phototransistors

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• 作者：Chuanmeng Chen ; Zhihong Feng ; Yiyu Feng ; Yuchen Yue ; Chengqun Qin ; Daihua Zhang ; Wei Feng
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：July 27, 2016
• 年：2016
• 卷：8
• 期：29
• 页码：19004-19011
• 全文大小：596K
• 年卷期：0
• ISSN：1944-8252

文摘

The large-scale synthesis of atomically thin, layered MoS₂/graphene heterostructures is of great interest in optoelectronic devices because of their unique properties. Herein, we present a scalable synthesis method to prepare centimeter-scale, continuous, and uniform films of bilayer MoS₂ using low-pressure chemical vapor deposition. This growth process was utilized to assemble a heterostructure by growing large-scale uniform films of bilayer MoS₂ on graphene (G-MoS₂/graphene). Atomic force microscopy, Raman spectra, and transmission electron microscopy characterization demonstrated that the large-scale bilayer MoS₂ film on graphene exhibited good thickness uniformity and a polycrystalline nature. A centimeter-scale phototransistor prepared using the G-MoS₂/graphene heterostructure exhibited a high responsivity of 32 mA/W with good cycling stability; this value is 1 order of magnitude higher than that of transferred MoS₂ on graphene (2.5 mA/W). This feature results from efficient charge transfer at the interface enabled by intimate contact between the grown bilayer MoS₂ (G-MoS₂) and graphene. The ability to integrate multilayer materials into atomically thin heterostructures paves the way for fabricating multifunctional devices by controlling their layer structure.