Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area

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• 作者：Jung Ho Yoon ; Sijung Yoo ; Seul Ji Song ; Kyung Jean Yoon ; Dae Eun Kwon ; Young Jae Kwon ; Tae Hyung Park ; Hye Jin Kim ; Xing Long Shao ; Yumin Kim ; Cheol Seong Hwang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：July 20, 2016
• 年：2016
• 卷：8
• 期：28
• 页码：18215-18221
• 全文大小：477K
• 年卷期：0
• ISSN：1944-8252

文摘

To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) performance and an electroforming-free, self-rectifying, low-power-consumption, multilevel-switching, and easy fabrication process with a deep sub-μm² cell area. In this work, a Pt/Ta₂O₅/HfO_2–x/TiN RS memory cell fabricated in the form of a vertical-type structure was presented as a feasible contender to meet the above requirements. While the fundamental RS characteristics of this material based on the electron trapping/detrapping mechanisms have been reported elsewhere, the influence of the cell scaling size to 0.34 μm² on the RS performance by adopting the vertical integration scheme was carefully examined in this work. The smaller cell area provided much better switching uniformity while all the other benefits of this specific material system were preserved. Using the overstressing technique, the nature of RS through the localized conducting path was further examined, which elucidated the fundamental difference between the present material system and the general ionic-motion-related bipolar RS mechanism.