High-Performance Inkjet-Printed Indium-Gallium-Zinc-Oxide Transistors Enabled by Embedded, Chemically Stable Graphene Electrodes

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• 作者：Ethan B. Secor ; Jeremy Smith ; Tobin J. Marks ; Mark C. Hersam
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：July 13, 2016
• 年：2016
• 卷：8
• 期：27
• 页码：17428-17434
• 全文大小：417K
• 年卷期：0
• ISSN：1944-8252

文摘

Recent developments in solution-processed amorphous oxide semiconductors have established indium-gallium-zinc-oxide (IGZO) as a promising candidate for printed electronics. A key challenge for this vision is the integration of IGZO thin-film transistor (TFT) channels with compatible source/drain electrodes using low-temperature, solution-phase patterning methods. Here we demonstrate the suitability of inkjet-printed graphene electrodes for this purpose. In contrast to common inkjet-printed silver-based conductive inks, graphene provides a chemically stable electrode-channel interface. Furthermore, by embedding the graphene electrode between two consecutive IGZO printing passes, high-performance IGZO TFTs are achieved with an electron mobility of ∼6 cm²/V·s and current on/off ratio of ∼10⁵. The resulting printed devices exhibit robust stability to aging in ambient as well as excellent resilience to thermal stress, thereby offering a promising platform for future printed electronics applications.