Strain Engineered CaBi2Nb2O9 Thin Films with Enhanced Electrical Properties

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• 作者：Yunxiang Zhang ; Jun Ouyang ; Jincan Zhang ; Yao Li ; Hongbo Cheng ; Huiwen Xu ; Menglin Liu ; Zhao-Peng Cao ; Chun-Ming Wang
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：July 6, 2016
• 年：2016
• 卷：8
• 期：26
• 页码：16744-16751
• 全文大小：659K
• 年卷期：0
• ISSN：1944-8252

文摘

In this work, strain engineered polycrystalline thin films (∼250 nm) of bismuth layer-structured ferroelectric (BLSF) CaBi₂Nb₂O₉ (CBNO) were prepared by using a radio frequency (RF) magnetron sputtering technique. XRD analysis revealed that the films were (200)/(020) and (00l) textured with a large in-plane tensile stress. Cross-sectional TEM analyses confirmed the bismuth layered-structure, as well as crystalline orientations and a strain-controlled growth mode of the grains. Result of a quantitative XPS analysis revealed that the composition of the film is close to the chemical stoichiometry. Excellent electrical properties were achieved in the CBNO films, including a high dielectric constant (∼280 @5 kHz), a small dielectric loss (tgδ ≤ 1.6% up to an applied electric field of ∼1200 kV/cm) and a large polarization (P_r ≈ 14 μC/cm² @ 1 kHz).