Macroporous p-GaP Photocathodes Prepared by Anodic Etching and Atomic Layer Deposition Doping

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• 作者：Sudarat Lee ; Ashley R. Bielinski ; Eli Fahrenkrug ; Neil P. Dasgupta ; Stephen Maldonado
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 29, 2016
• 年：2016
• 卷：8
• 期：25
• 页码：16178-16185
• 全文大小：463K
• 年卷期：0
• ISSN：1944-8252

文摘

P-type macroporous gallium phosphide (GaP) photoelectrodes have been prepared by anodic etching of an undoped, intrinsically n-type GaP(100) wafer and followed by drive-in doping with Zn from conformal ZnO films prepared by atomic layer deposition (ALD). Specifically, 30 nm ALD ZnO films were coated on GaP macroporous films and then annealed at T = 650 °C for various times to diffuse Zn in GaP. Under 100 mW cm^–2 white light illumination, the resulting Zn-doped macroporous GaP consistently exhibit strong cathodic photocurrent when measured in aqueous electrolyte containing methyl viologen. Wavelength-dependent photoresponse measurements of the Zn-doped macroporous GaP revealed enhanced collection efficiency at wavelengths longer than 460 nm, indicating that the ALD doping step rendered the entire material p-type and imparted the ability to sustain a strong internal electric field that preferentially drove photogenerated electrons to the GaP/electrolyte interface. Collectively, this work presents a doping strategy with a potentially high degree of controllability for high-aspect ratio III–V materials, where the ZnO ALD film is a practical dopant source for Zn.