Simple Interface Engineering of Graphene Transistors with Hydrophobizing Stamps

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• 作者：Soo Sang Chae ; Won Jin Choi ; Cheol-Soo Yang ; Tae Il Lee ; Jeong-O Lee
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 15, 2016
• 年：2016
• 卷：8
• 期：23
• 页码：14307-14312
• 全文大小：392K
• 年卷期：0
• ISSN：1944-8252

文摘

We demonstrate a simple surface engineering method for fabricating graphene transistors by using hydrophobizing stamps. By simply contact-printing hydrophobizing stamp that is made with polydimethylsiloxane (PDMS) on a standard silicon substrate for a certain contact-time, it was possible to control the contact angle of the substrate and electrical characteristics of the graphene transistors supported on the substrate. Moreover, graphene transistors supported on the engineered silicon substrate showed improved performances, including an increase in carrier mobility and loss of hysteresis. As a proof-of-concept experiment, a simple logic gate operation was demonstrated by connecting a pristine graphene device with an interface-engineered device.