Doping Zn2+ in CuS Nanoflowers into Chemically Homogeneous Zn0.49Cu0.50S1.01 Superlattice Crystal Structure as High-Efficiency n-Type Photoelectric Semiconductors

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• 作者：Peipei Wang ; Yuanhao Gao ; Pinjiang Li ; Xiaofei Zhang ; Helin Niu ; Zhi Zheng
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 22, 2016
• 年：2016
• 卷：8
• 期：24
• 页码：15820-15827
• 全文大小：453K
• 年卷期：0
• ISSN：1944-8252

文摘

Doping Zn²⁺ in CuS nanoflower into chemically homogeneous superlattice crystal structure is proposed to convert p-type CuS semiconductor to an n-type CuS semiconductor for significantly enhanced photoelectric response performance. In this study, the chemically homogeneous Zn-doped CuS nanoflowers (Zn_0.06Cu_0.94S, Zn_0.26Cu_0.73S_1.01, Zn_0.36Cu_0.62S_1.02, Zn_0.49Cu_0.50S_1.01, Zn_0.58Cu_0.40S_1.02) are synthesized by reacting appropriate amounts of CuCl and Zn(Ac)₂·2H₂O with sulfur powders in ethanol solvothermal process. By tuning the Zn/Cu atomic ratios to ∼1:1, the chemically homogeneous Zn-doped CuS nanoflowers could be converted to the perfect Zn_0.49Cu_0.50S_1.01 superlattice structure, corresponding to the periodic Cu–S–Zn atom arrangements in the entire crystal lattice, which can induce an effective built-in electric field with n-type semiconductor characteristics to significantly improve the photoelectric response performance, such as the lifetime of photogenerated charge carriers up to 6 × 10^–8–6 × 10^–4 s with the transient photovoltage (TPV) response intensity to ∼44 mV. This study reveals that the Zn²⁺ doping in CuS nanoflowers is a key factor in determining the superlattice structure, semiconductor type, and the dynamic behaviors of charge carriers.