Effect of Electron Transporting Layer on Bismuth-Based Lead-Free Perovskite (CH3NH3)3 Bi2I9 for Photovoltaic Applications

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• 作者：Trilok Singh ; Ashish Kulkarni ; Masashi Ikegami ; Tsutomu Miyasaka
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 15, 2016
• 年：2016
• 卷：8
• 期：23
• 页码：14542-14547
• 全文大小：484K
• 年卷期：0
• ISSN：1944-8252

文摘

Methylammonium iodo bismuthate ((CH₃NH₃)₃Bi₂I₉) (MBI) perovskite is a promising alternative to rapidly progressing hybrid organic–inorganic lead perovskites because of its better stability and low toxicity compared to lead-based perovskites. Solution-processed perovskite fabricated by single-step spin-coating and subsequent heating produced polycrystalline films of hybrid perovskite (CH₃NH₃)₃Bi₂I₉), whose morphology was influenced drastically by the nature of substrates. The optical measurements showed a strong absorption band around 500 nm. The devices made on anatase TiO₂ mesoporous layer showed good performance with current density over 0.8 mA cm^–2 while the devices on brookite TiO₂ layer and planar (free of porous layer) was inefficient. However, all the MBI devices were stable to ambient conditions for more than 10 weeks.