Subtle Interplay between Localized Magnetic Moments and Itinerant Electrons in LaAlO3/SrTiO3 Heterostructures

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• 作者：Hai-Long Hu ; Rong Zeng ; Anh Pham ; Thiam Teck Tan ; Zhigang Chen ; Charlie Kong ; Danyang Wang ; Sean Li
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：June 1, 2016
• 年：2016
• 卷：8
• 期：21
• 页码：13630-13636
• 全文大小：539K
• 年卷期：0
• ISSN：1944-8252

文摘

Clarification of the role of magnetic ordering and scattering in two-dimensional electron gas has become increasingly important to understand the transport and magnetic behavior in the LaAlO₃ (LAO)/SrTiO₃ (STO) heterostructures. In this work, we report the sheet resistance of the LAO/STO heterostructures as functions of temperature, magnetic field, and field orientation. An unexpected resistance minimum was discovered at ∼10 K under a sufficiently high in-plane magnetic field. An anisotropic magnetoresistance (MR) is clearly identified, indicating the presence of magnetic scattering which may be related to the interaction between itinerant electrons and localized magnetic moments in the LaAlO₃/SrTiO₃ heterostructures. It is believed that the high concentration of oxygen vacancies induced by the ultralow oxygen partial pressure during the deposition process plays a predominant role in the occurrence of the anisotropic MR.