Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition

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• 作者：Byung Chul Jang ; Hyejeong Seong ; Sung Kyu Kim ; Jong Yun Kim ; Beom Jun Koo ; Junhwan Choi ; Sang Yoon Yang ; Sung Gap Im ; Sung-Yool Choi
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：May 25, 2016
• 年：2016
• 卷：8
• 期：20
• 页码：12951-12958
• 全文大小：466K
• 年卷期：0
• ISSN：1944-8252

文摘

Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity, electrical stability, and long-term stability of the polymer thin films. Here, we present poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3)-based RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application. Because of the outstanding chemical stability of pV3D3 films, the pV3D3-RRAM arrays can be fabricated by a conventional photolithography process. The pV3D3-RRAM on flexible substrates showed unipolar resistive switching memory with an on/off ratio of over 10⁷, stable retention time for 10⁵ s, excellent cycling endurance over 10⁵ cycles, and robust immunity to mechanical stress. In addition, pV3D3-RRAMs showed good uniformity in terms of device-to-device distribution. The pV3D3-RRAM will pave the way for development of next-generation flexible nonvolatile memory devices.