Influence of Ambient Gas on the Performance of Quantum-Dot Light-Emitting Diodes

详细信息    查看全文

• 作者：Qingli Lin ; Fei Chen ; Hongzhe Wang ; Huaibin Shen ; Aqiang Wang ; Lei Wang ; Fengjuan Zhang ; Fang Guo ; Lin Song Li
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：May 11, 2016
• 年：2016
• 卷：8
• 期：18
• 页码：11557-11563
• 全文大小：429K
• 年卷期：0
• ISSN：1944-8252

文摘

Here, we report the influence of the ambient gas on the performance of quantum dot-based light-emitting diodes (QD-LEDs). The blue QD-LED devices with the maximum external quantum efficiency of 8.1% and the turn-on voltage of 2.7 V could be obtained in air. The efficiency decreases by 12% and turn-on voltage increases by 0.3 V relative to the control devices fabricated in a N₂-filled glovebox. The histogram of maximum external quantum efficiency (EQE) shows average peak EQE of 8.08% and a low standard deviation of 3.63%, suggesting high reproducibility. Correspondingly, the operational lifetime of 376 h is obtained, which is on par with 408 h of devices fabricated in N₂. For the devices fabricated in air, relatively high efficiency could be maintained only at low voltages, because of the near balanced injection of carriers under low bias. The measurements of contact potential difference, chemical composition, and surface roughness are used to verify the variation of energy level and surface morphology of films influenced by different ambient gas. These results would offer reasonable guidance for the application of QD-LEDs in actual large-scale production.