Interfacial Ion Intermixing Effect on Four-Resistance States in La0.7Sr0.3MnO3/BaTiO3/La0.7Sr0.3MnO3 Multiferroic Tunnel Junctions

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• 作者：Weichuan Huang ; Yue Lin ; Yuewei Yin ; Lei Feng ; Dalong Zhang ; Wenbo Zhao ; Qi Li ; Xiaoguang Li
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：April 27, 2016
• 年：2016
• 卷：8
• 期：16
• 页码：10422-10429
• 全文大小：600K
• 年卷期：0
• ISSN：1944-8252

文摘

A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents at least four resistance states in a single memory cell and therefore opens an avenue for the development of the next generation of high-density nonvolatile memory devices. Here, using the all-perovskite-oxide La_0.7Sr_0.3MnO₃/BaTiO₃/La_0.7Sr_0.3MnO₃ as a model MFTJ system, we demonstrate asymmetrical Mn—Ti sublattice intermixing at the La_0.7Sr_0.3MnO₃/BaTiO₃ interfaces by direct local measurements of the structure and valence, which reveals the relationship between ferroelectric polarization directions and four-resistance states, and the low temperature anomalous tunneling behavior in the MFTJ. These findings emphasize the crucial role of the interfaces in MFTJs and are quite important for understanding the electric transport of MFTJs as well as designing high-density multistates storage devices.