Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium–Gallium–Zinc-Oxide Electric-Double-Layer Transistors

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• 作者：Chang Jin Wan ; Yang Hui Liu ; Li Qiang Zhu ; Ping Feng ; Yi Shi ; Qing Wan
• 刊名：ACS Applied Materials & Interfaces
• 出版年：2016
• 出版时间：April 20, 2016
• 年：2016
• 卷：8
• 期：15
• 页码：9762-9768
• 全文大小：456K
• 年卷期：0
• ISSN：1944-8252

文摘

In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium–gallium–zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.